XU Hongmei,LI Haoshen,LIU Yimeng.Memristor - based SRAM memory design[J].Journal of Yanbian University,2022,(03):222-228.
基于忆阻器的SRAM存储单元设计
- Title:
- Memristor - based SRAM memory design
- 文章编号:
- 1004-4353(2022)03-0222-07
- Keywords:
- memristor; SRAM memory cell; GDI logic circuit; D latch
- 分类号:
- TP343
- 文献标志码:
- A
- 摘要:
- 为了突破冯?诺依曼架构瓶颈,实现存算一体的存储功能,利用D锁存器设计了一种忆阻器存储单元.该忆阻器存储单元由忆阻器基本逻辑与门、或门和MeMOS电路组成.PSpice仿真显示,该忆阻器存储单元不仅可以实现非易失性存储功能,而且具有体积小、功耗低、结构简单等优点,可为实现非易失性存储单元提供良好参考.
- Abstract:
- In order to break through the bottleneck of von Neumann architecture and realize the memory function of memory and calculation, a memristor memory cell is designed by using D latch.The memory cell of the memristor consists of the basic logic and gate of the memristor, or gate and MeMOS circuit.PSpice simulation shows that the memristor memory cell can not only realize the nonvolatile memory function, but also has the advantages of small size, low power consumption, simple structure and so on, which can provide a good reference for the realization of nonvolatile memory cells.
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相似文献/References:
[1]蔡振扬,刘苡萌,徐红梅.一种基于忆阻器的2T2M存储阵列的设计研究[J].延边大学学报(自然科学版),2023,(03):257.
CAI Zhenyang,LIU Yimeng,XU Hongmei.Design of a 2T2M storage array based on memristors[J].Journal of Yanbian University,2023,(03):257.
备注/Memo
收稿日期: 2022-04-15
基金项目: 吉林省高等教育学会科研项目(JGJX2020D48); 吉林省教育厅科学研究项目(JJKH20210589KJ)
作者简介: 徐红梅(1975—),女,博士,教授,研究方向为非线性动力学.