[1]蔡振扬,刘苡萌,徐红梅.一种基于忆阻器的2T2M存储阵列的设计研究[J].延边大学学报(自然科学版),2023,(03):257-261.
 CAI Zhenyang,LIU Yimeng,XU Hongmei.Design of a 2T2M storage array based on memristors[J].Journal of Yanbian University,2023,(03):257-261.
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一种基于忆阻器的2T2M存储阵列的设计研究

参考文献/References:

[1] 徐红梅,李浩申,刘苡萌.基于忆阻器的SRAM存储单元设计[J].延边大学学报(自然科学版),2022,48(3):222 - 228.
[2] TETZLAFF R, ASCOLI A, MESSARIS Y, et al.Theoretical foundations of memristor cellular nonlinear networks: memcomputing with bistable - like memristors [J].IEEE Transactions on Circuits and Systems I: Regular Papers, 2019,67(2):502 - 515.
[3] 孙晶茹,李梦圆,康可欣,等.基于异构忆阻器的1T2M 多值存储交叉阵列设计[J].电子与信息学报,2021,43(6):1533 - 1540.
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[6] MANEM H, ROSE G S.A read - monitored write circuit for 1T1M multi - level memristor memories [C]//2011 IEEE International Symposium of Circuits and Systems(ISCAS).Rio de Janeiro: IEEE, 2011:2938 - 2941.
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[8] SINGH J, RAJ B.Design and investigation of 7T2M - NVSRAM with enhanced stability and temperature impact on store/restore energy [J].IEEE Transactions on Very Large Scale Integration(VLSI)Systems, 2019,27(6):1322 - 1328.
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相似文献/References:

[1]徐红梅,李浩申,刘苡萌.基于忆阻器的SRAM存储单元设计[J].延边大学学报(自然科学版),2022,(03):222.
 XU Hongmei,LI Haoshen,LIU Yimeng.Memristor - based SRAM memory design[J].Journal of Yanbian University,2022,(03):222.

备注/Memo

收稿日期: 2023-05-08
基金项目: 吉林省教育厅科学研究项目(JJKH20210589KJ)
第一作者: 蔡振扬(2000—),男,硕士研究生,研究方向为非线性动力学.
通信作者: 徐红梅(1975—),女,博士,教授,研究方向为非线性动力学.

更新日期/Last Update: 2023-09-20