YANG Gongsheng,GUO Zhiwen,GU Guangrui*,et al.Investigation on properties of Ti-doped Cu3N films fabricatedby reaction magnetron co-sputtering[J].Journal of Yanbian University,2018,44(01):22-26,94.
反应磁控共溅射制备Ti掺杂的Cu3N薄膜的特性研究
- Title:
- Investigation on properties of Ti-doped Cu3N films fabricated by reaction magnetron co-sputtering
- Keywords:
- Ti-doped Cu3N; resistivity; energy gap; micro hardness
- 分类号:
- O484.1
- 文献标志码:
- A
- 摘要:
- 为了研究钛掺杂对Cu3N薄膜特性的影响,利用射频和直流反应共溅射方法,在硅(100)和ITO玻璃衬底上,成功制备了不同Ti掺杂量的Cu3N薄膜(Ti-Cu3N薄膜).通过X射线衍射(XRD)发现,Ti-Cu3N薄膜的结晶度均低于未掺杂的Cu3N薄膜,但是随着Ti掺杂量的增加,结晶度增强.Ti-Cu3N薄膜的晶格常数随着Ti掺杂量的增加先增后减,但均接近于Cu3N的理论值.扫描电子显微镜(SEM)图片显示,随着Ti掺杂量的增加,薄膜表面变得粗糙,晶粒大小变得均匀.薄膜的微观硬度在Ti掺杂量为1.86 at%时达到5.04 GPa,而未掺杂的为4.19 GPa.随着Ti掺杂量的增加,薄膜电阻率逐渐从未掺杂的5.73 kΩ·cm下降到Ti掺杂量为1.86 at%时的1.21 kΩ·cm.Ti的掺杂使薄膜的平均反射率变大,但过量的Ti会导致透过率下降.随着Ti掺杂量的增加,薄膜的带隙先增大后减小,Ti掺杂量为1.60 at%时获得1.39 eV的最大带隙值.
- Abstract:
- To investigate the dependence of the properties for Cu3N thin films on titanium doping, Ti-doped copper nitride(Cu3N)thin films with different titanium content are prepared by direct current(DC)and radio frequency(RF)reaction magnetron co-sputtering onto Si(100)and ITO glass substrates. X ray diffraction(XRD)revealed that the crystallinity of Ti-Cu3N thin films was lower than that of undoped Cu3N films, but with the increase of Ti doping, the crystallinity increased slightly. The lattice constant of Ti-Cu3N thin films increases first and then decreases with the increase of Ti doping amount, but all of them are close to the theoretical value of Cu3N. Scanning electron microscope(SEM)images showed that with the increase of Ti doping, the surface of the films became rough and the grain size became uniform. The microhardness of the films reaches 5.04 GPa when the Ti content is 1.86 at%, which is significantly higher than that of the undoped 4.19 GPa. With the increase of Ti doping amount, the resistivity of the films decreases gradually from the 5.73 kΩ·cm to 1.21 kΩ·cm at Ti at%. The average reflectivity of the films increases with the doping of Ti, but the excessive Ti will lead to the decrease of transmittance. The band gap first increases and then decreases with the increase of Ti doping amount. The maximum band gap value of 1.39 eV is obtained when the Ti doping amount is 1.60 at%.
参考文献/References:
[1] Wang J, Chen J T, Yuan X M, et al. Copper nitride(Cu3N)thin films deposited by RF magnetron sputtering[J]. Journal of Crystal Growth, 2006,286(2):407-412.
[2] 吴志国,张伟伟,白利峰,等.纳米Cu3N薄膜的制备与性能[J].物理学报,2005,54(4):1687-1692.
[3] Maruyama T, Morishita T. Copper nitride and tin nitride thin films for write-once optical recording media [J]. Appl Phys Lett, 1996,69(7):890-891.
[4] Xiao J R, Li Y W, Jiang A H, et al. Structure, optical property and thermal stability of copper nitride films prepared by reactive radio frequency magnetron sputtering[J]. Journal of Materials Science & Technology, 2011,27(5):403-407.
[5] Matsunami N, Kakiuchida H, Tazawa M, et al. Electronic and atomic structure modifications of copper nitride films by ion impact and phase separation[J]. Nuclear Instruments & Methods in Physics Research, 2009,267(16):2653-2656.
[6] Moreno-Armenta M G, Perez W L, Takeuchi N. First-principles calculations of the structural and electronic properties of Cu3MN compounds with M: Ni, Cu, Zn, Pd, Ag, and Cd[J]. Solid State Sciences, 2007,9(2):166-172.
[7] 袁晓梅,王君,吴志国,等.射频磁控溅射法制备Cu3N薄膜及其性能研究[J].人工晶体学报,2006,35(3):635-640.
[8] Nosaka T, Yoshitake M, Okamoto A, et al. Copper nitride thin films prepared by reactive radio-frequency magnetron sputtering[J]. Thin Solid Films, 1999,348(1/2):8-13.
[9] 肖剑荣,徐慧,李燕峰,等.氮分压对氮化铜薄膜结构及光学带隙的影响[J].物理学报,2007,56(7):4169-4174.
[10] Gao L, Ji A L, Zhang W B, et al. Insertion of Zn atoms into Cu3N lattice: structural distortion and modification of electronic properties[J]. Journal of Crystal Growth, 2011,321(1):157-161.
[11] Pierson J F. Structure and properties of copper nitride films formed by reactive magnetron sputtering[J]. Vacuum, 2002,66(1):59-64.
[12] Fan X Y, Wu Z G, Zhang G A, et al. Ti-doped copper nitride films deposited by cylindrical magnetron sputtering[J]. Journal of Alloys & Compounds, 2007,440(1):254-258.
[13] 李兴鳌,刘祖黎,左安友,等.磁控溅射制备铁掺杂氮化铜薄膜的研究[J].材料导报,2006,20(12):141-144.
[14] Fan X Y, Li Z J, Meng A L, et al. Study on the structure, morphology and properties of Fe-doped Cu3N films[J]. Journal of Physics D-Applied Physics, 2014,47(18):185304-185312.
[15] Rahmati A, Bidadi H, Ahmadi K, et al. Ti substituted nano-crystalline Cu 3N thin films[J]. Journal of Coatings Technology & Research, 2011,8(2):289-297.
[16] Li X, Bai Q, Yang J, et al. Effect of N2-gas flow rates on the structures and properties of copper nitride films prepared by reactive DC magnetron sputtering[J]. Vacuum, 2013,89(1):78-81.
[17] Yue G H, Yan P X, Wang J. Study on the preparation and properties of copper nitride thin films[J]. Journal of Crystal Growth, 2005,274(3/4):464-468.
[18] 白秋飞.磁控溅射制备氮化铜薄膜及其掺杂研究[D].南京:南京邮电大学,2012.
[19] Balamurugan B, Maruyama T. Inhomogeneous effect of particle size on core-level and valence-band electrons: size-dependent electronic structure of Cu3N nanoparticles[J]. Applied Physics Letters, 2006,89(3):2369-2373.
[20] Tauc J, Grigorovici R, Vancu A. Optical properties and electronic structure of amorphous germanium[J]. Physica StatusSolidi(B), 1966,15(2):627-637.
[21] Yu A, Ma Y, Chen A, et al. Thermal stability and optical properties of Sc-doped copper nitride films[J]. Vacuum, 2017,141(1):243-248.
[22] Deng R, Ozsdolay B D, Zheng P Y, et al. Optical and transport measurement and first-principles determination of the ScN band gap[J]. Physical Review B, 2015,91(4):045104.
相似文献/References:
[1]崔伟哲,韩玉蕊,顾广瑞*.SnO2 - CdO复合薄膜的制备及其光电性能研究[J].延边大学学报(自然科学版),2021,47(03):228.
CUI Weizhe,HAN Yurui,GU Guangrui*.Preparation and properties of SnO2- CdO composite films[J].Journal of Yanbian University,2021,47(01):228.
备注/Memo
收稿日期: 2017-11-13
基金项目: 国家自然科学基金资助项目(51272224,11164031)
*通信作者: 顾广瑞(1970—),男,博士,教授,研究方向为薄膜材料.